![]() Mitchell said the goal is to better scale bandwidth interconnect and to get more into a given area as DRAM market and HBM continue to stack more and more devices - as high as 16 in some cases. And this type of technology allows them to scale that down to a very fine pitch.” They don’t want to increase the die side, so they’re looking at getting the distance between connections smaller and smaller. “The number of connections between devices is increasing. With high bandwidth memory (HBM) that uses DRAM, there’s a desire to increase the number of connections, said Mitchell, and high performance means more bandwidth. ![]() Invensas’ DBI 3D integration technology has the potential to optimize the manufacturing process of NAND through periphery logic and memory array segregation - and to potentially offer a more cost-effective way to stack DRAM than what is currently being done with HBM. On the NAND side, he said, the main driver is improving costs while reducing power consumption to further scale. The DBI technology first saw traction with small image sensors that must be especially thin, said Mitchell, and now the company is focused on expanding the process into other markets and other applications, including 3D NAND and DRAM. ![]() It also allows the stacking of known good die - that are the same or different sizes, processed on fine or coarse wafer process technology nodes, or manufactured on the same or different wafer sizes - while readily scaling down to 1 µm interconnect pitch. 【PowerUP Asia 2023】GaN is Pushing the Boundaries of Power Density and EfficiencyĭBI Ultra enables low-temperature, low-profile die-to-wafer and die-to-die hybrid bonding that allows for a thinner stack than conventional approaches by eliminating the need for copper pillars and underfill. “As we look at the semiconductor space moving forward, 3D is becoming so much more important.” The company has several versions of its direct bond interconnect (DBI) technology that bonds two wafers together and that can be applied to sensors, NAND, and DRAM. In a telephone interview with EE Times, Invensas president Craig Mitchell said the company’s DBI Ultra platform has the potential to allow the semiconductor industry to extend beyond Moore’s Law by making it possible to manufacture 8-, 12- and even 16-layer chip packages. ![]() The transfer includes the Invensas DBI Ultra 3D interconnect technology focused on next-generation memory. Xperi Corporation, a company that represents a broad portfolio of technology intellectual property, including Tessera and Invensas, recently announced a new patent and technology license agreement with SK Hynix for access to its portfolio of semiconductor IP. ![]() TORONTO - Stacking isn’t new, but one company believes it has a better way of doing it that could be applied to DRAM, and it is transferring the technology to memory makers. With a new patent and technology license agreement, will Xperi's DBI stacking technology drive down costs for wider adoption? ![]()
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